Power MOSFETS | Status :
Active
Automotive
MCU80N06AHE3
- Package Type:DPAK
- Packing Info:Tape:2.5K/Reel,25K/Ctn;
- Category:Power MOSFETS
Product Detail
| Part Number | Number of Functions | Channel | Drain-Source Voltage VDS (V) |
Gate-Source Voltage VGS (V) |
Drain Current ID (A) |
Drain-Source On-Resistance RDS(ON) Max @VGS=10V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=4.5V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=2.5V (Ω) |
Gate Threshold Voltage VGS(th) Min (V) |
Gate Threshold Voltage VGS(th) Max (V) |
ESD Diodes |
Junction Temperature Tj [max] (°C) |
Single Pulsed Avalanche Energy EAS(mJ) |
Pulsed Drain Current IDM(A) |
Input Capacitance Ciss(pF) |
Output Capacitance Coss(pF) |
Power Rating PD(W) |
Total Gate Charge Qg(nC) |
Gate-Drain Charge Qgd(nC) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MCU80N06AHE3 | Single | N | 60 | ±20 | 80 | 0.0075 | 0.01 | 1.2 | 2.5 | No | 150 | 144 | 240 | 2100 | 670 | 78 | 31 | 5 |
| Part Number MCU80N06AHE3 | Number of Functions Single | Channel N |
Drain-Source Voltage VDS (V) 60 |
Gate-Source Voltage VGS (V) ±20 |
Drain Current ID (A) 80 |
Drain-Source On-Resistance RDS(ON) Max @VGS=10V (Ω) 0.0075 |
Drain-Source On-Resistance RDS(ON) Max @VGS=4.5V (Ω) 0.01 |
Drain-Source On-Resistance RDS(ON) Max @VGS=2.5V (Ω) |
Gate Threshold Voltage VGS(th) Min (V) 1.2 |
Gate Threshold Voltage VGS(th) Max (V) 2.5 |
ESD Diodes No |
Junction Temperature Tj [max] (°C) 150 |
Single Pulsed Avalanche Energy EAS(mJ) 144 |
Pulsed Drain Current IDM(A) 240 |
Packing Information
Environmental Information 
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