Power MOSFETS | Status :
Active
MSJPF11N80A
- Package Type:TO-220F
- Packing Info:Bulk:1Kpcs/Box;
- Category:Power MOSFETS
Product Detail
| Part Number | Number of Functions | Channel | Drain-Source Voltage VDS (V) |
Gate-Source Voltage VGS (V) |
Drain Current ID (A) |
Drain-Source On-Resistance RDS(ON) Max @VGS=10V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=4.5V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=2.5V (Ω) |
Gate Threshold Voltage VGS(th) Min (V) |
Gate Threshold Voltage VGS(th) Max (V) |
ESD Diodes |
Junction Temperature Tj [max] (°C) |
Single Pulsed Avalanche Energy EAS(mJ) |
Pulsed Drain Current IDM(A) |
Input Capacitance Ciss(pF) |
Output Capacitance Coss(pF) |
Power Rating PD(W) |
Total Gate Charge Qg(nC) |
Gate-Drain Charge Qgd(nC) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MSJPF11N80A | Single | N | 800 | ±20 | 11 | 0.47 | 2.5 | 4.5 | Yes | 150 | 142 | 33 | 958 | 26 | 25 | 24 | 10 |
| Part Number MSJPF11N80A | Number of Functions Single | Channel N |
Drain-Source Voltage VDS (V) 800 |
Gate-Source Voltage VGS (V) ±20 |
Drain Current ID (A) 11 |
Drain-Source On-Resistance RDS(ON) Max @VGS=10V (Ω) 0.47 |
Drain-Source On-Resistance RDS(ON) Max @VGS=4.5V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=2.5V (Ω) |
Gate Threshold Voltage VGS(th) Min (V) 2.5 |
Gate Threshold Voltage VGS(th) Max (V) 4.5 |
ESD Diodes Yes |
Junction Temperature Tj [max] (°C) 150 |
Single Pulsed Avalanche Energy EAS(mJ) 142 |
Pulsed Drain Current IDM(A) 33 |
Packing Information
Environmental Information 
Download
| Tin Whisker Test Report |
|---|
|
Similar Recommendations
| Part Number | Category | Package Type | Status | Datasheet |
|---|---|---|---|---|
| MCAC150N03A | Power MOSFETS | DFN5060 | Active |
 Datasheet
|
| MCAC50N03 | Power MOSFETS | DFN5060 | Active |
Datasheet
|
| MCAC50N10Y | Power MOSFETS | DFN5060 | Active |
Datasheet
|
| MCAC80N06Y | Power MOSFETS | DFN5060 | Active |
Datasheet
|
