Small Signal MOSFETS | Status :
Active
Automotive
SI2102AHE3
- Package Type:SOT-323
- Packing Info:Tape: 3K/Reel, 120K/Ctn.;
- Category:Small Signal MOSFETS
Product Detail
Part Number | Number of Functions | Channel | Drain-Source Voltage VDS (V) |
Gate-Source Voltage VGS (V) |
Drain Current ID (A) |
RDS(ON) Max @VGS=10V (Ω) |
RDS(ON) Max @VGS=4.5V (Ω) |
RDS(ON) Max @VGS=2.5V (Ω) |
Gate Threshold Voltage VGS(th) Min (V) |
Gate Threshold Voltage VGS(th) Max (V) |
ESD Diodes |
Junction Temperature Tj [max] (°C) |
Input Capacitance Ciss(pF) |
Output Capacitance Coss(pF) |
Power Rating PD(W) |
Total Gate Charge Qg(nC) |
Gate-Drain Charge Qgd(nC) |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
SI2102AHE3 | Single | N | 20 | ±10 | 2 | 0.08 | 0.098 | 0.5 | 1.1 | No | 150 | 210 | 36 | 0.357 | 3.2 | 0.8 |
Part Number SI2102AHE3 | Number of Functions Single | Channel N |
Drain-Source Voltage VDS (V) 20 |
Gate-Source Voltage VGS (V) ±10 |
Drain Current ID (A) 2 |
RDS(ON) Max @VGS=10V (Ω) |
RDS(ON) Max @VGS=4.5V (Ω) 0.08 |
RDS(ON) Max @VGS=2.5V (Ω) 0.098 |
Gate Threshold Voltage VGS(th) Min (V) 0.5 |
Gate Threshold Voltage VGS(th) Max (V) 1.1 |
ESD Diodes No |
Junction Temperature Tj [max] (°C) 150 |
Packing Information
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