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SIC MOSFETS | Status :
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SICW1000N170A
- Package Type:TO-247AB
- Packing Info:Tube:30pcs/Tube, 1.8K/Ctn;
- Category:SIC MOSFETS
Product Detail
| Part Number | Number of Functions | Channel | Drain-Source Voltage VDS (V) |
Gate-Source Voltage VGS (V) |
Drain Current ID (A) |
Drain-Source On-Resistance RDS(ON) Max @VGS=18V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=15V (Ω) |
Gate Threshold Voltage VGS(th) Min (V) |
Gate Threshold Voltage VGS(th) Max (V) |
ESD Diodes |
Junction Temperature Tj [max] (°C) |
Single Pulsed Avalanche Energy EAS(mJ) |
Pulsed Drain Current IDM(A) |
Input Capacitance Ciss(pF) |
Power Rating PD(W) |
Total Gate Charge Qg(nC) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SICW1000N170A | Single | N | 1700 | -5/+25 | 3 | 1.37 | 1.48 | 2.5 | 4.5 | No | 150 | 12 | 124 | 69 | 15.5 |
| Part Number SICW1000N170A | Number of Functions Single | Channel N |
Drain-Source Voltage VDS (V) 1700 |
Gate-Source Voltage VGS (V) -5/+25 |
Drain Current ID (A) 3 |
Drain-Source On-Resistance RDS(ON) Max @VGS=18V (Ω) 1.37 |
Drain-Source On-Resistance RDS(ON) Max @VGS=15V (Ω) 1.48 |
Gate Threshold Voltage VGS(th) Min (V) 2.5 |
Gate Threshold Voltage VGS(th) Max (V) 4.5 |
ESD Diodes No |
Junction Temperature Tj [max] (°C) 150 |
Single Pulsed Avalanche Energy EAS(mJ) |
Pulsed Drain Current IDM(A) 12 |
Packing Information
Environmental Information 
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