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SIC MOSFETS | Status :
Active
SICW100N065H4
- Package Type:TO-247-4
- Packing Info:Tube:30pcs/Tube, 1.8K/Ctn;
- Category:SIC MOSFETS
Product Detail
| Part Number | Number of Functions | Channel | Drain-Source Voltage VDS (V) |
Gate-Source Voltage VGS (V) |
Drain Current ID (A) |
Drain-Source On-Resistance RDS(ON) Max @VGS=18V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=15V (Ω) |
Gate Threshold Voltage VGS(th) Min (V) |
Gate Threshold Voltage VGS(th) Max (V) |
ESD Diodes |
Junction Temperature Tj [max] (°C) |
Single Pulsed Avalanche Energy EAS(mJ) |
Pulsed Drain Current IDM(A) |
Input Capacitance Ciss(pF) |
Power Rating PD(W) |
Total Gate Charge Qg(nC) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SICW100N065H4 | Single | N | 650 | -10/+25 | 32 | 2 | 4.5 | No | 175 | 800 | 58.5 | 910 | 166 | 66 |
| Part Number SICW100N065H4 | Number of Functions Single | Channel N |
Drain-Source Voltage VDS (V) 650 |
Gate-Source Voltage VGS (V) -10/+25 |
Drain Current ID (A) 32 |
Drain-Source On-Resistance RDS(ON) Max @VGS=18V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=15V (Ω) |
Gate Threshold Voltage VGS(th) Min (V) 2 |
Gate Threshold Voltage VGS(th) Max (V) 4.5 |
ESD Diodes No |
Junction Temperature Tj [max] (°C) 175 |
Single Pulsed Avalanche Energy EAS(mJ) 800 |
Pulsed Drain Current IDM(A) 58.5 |
Packing Information
| Part Number | Package Type | Packing Specification | Component Weight (g) | Marking Code |
|---|---|---|---|---|
| SICW100N065H4 |
TO-247-4
|
TO-247-4 | 6.1165 | SICW100N065H4 |
Environmental Information 
Download
| MSL |
|---|
| N/A |
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