Power MOSFETS | Status :
Active
Automotive
MCAC100N10YHE3
- Package Type:DFN5060
- Packing Info:Tape&Reel:5Kpcs/Reel;
- Category:Power MOSFETS
Product Detail
| Part Number | Number of Functions | Channel | Drain-Source Voltage VDS (V) |
Gate-Source Voltage VGS (V) |
Drain Current ID (A) |
Drain-Source On-Resistance RDS(ON) Max @VGS=10V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=4.5V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=2.5V (Ω) |
Gate Threshold Voltage VGS(th) Min (V) |
Gate Threshold Voltage VGS(th) Max (V) |
ESD Diodes |
Junction Temperature Tj [max] (°C) |
Single Pulsed Avalanche Energy EAS(mJ) |
Pulsed Drain Current IDM(A) |
Input Capacitance Ciss(pF) |
Output Capacitance Coss(pF) |
Power Rating PD(W) |
Total Gate Charge Qg(nC) |
Gate-Drain Charge Qgd(nC) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MCAC100N10YHE3 | Single | N | 100 | ±20 | 100 | 0.0055 | 2 | 4 | No | 150 | 400 | 360 | 4700 | 2300 | 113 | 55 | 14 |
| Part Number MCAC100N10YHE3 | Number of Functions Single | Channel N |
Drain-Source Voltage VDS (V) 100 |
Gate-Source Voltage VGS (V) ±20 |
Drain Current ID (A) 100 |
Drain-Source On-Resistance RDS(ON) Max @VGS=10V (Ω) 0.0055 |
Drain-Source On-Resistance RDS(ON) Max @VGS=4.5V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=2.5V (Ω) |
Gate Threshold Voltage VGS(th) Min (V) 2 |
Gate Threshold Voltage VGS(th) Max (V) 4 |
ESD Diodes No |
Junction Temperature Tj [max] (°C) 150 |
Single Pulsed Avalanche Energy EAS(mJ) 400 |
Pulsed Drain Current IDM(A) 360 |
Packing Information
Environmental Information 
Download
| Tin Whisker Test Report | MSL | Halogen Free |
|---|---|---|
|
1 |
|
Similar Recommendations
| Part Number | Category | Package Type | Status | Datasheet |
|---|---|---|---|---|
| MCB130N10YA | Power MOSFETS | D2-PAK | Active |
 Datasheet
|
| MCG30N03A | Power MOSFETS | DFN3333 | Active |
Datasheet
|
| MCGD25N04 | Power MOSFETS | DFN3333-D | Active |
Datasheet
|
| MCP60P06 | Power MOSFETS | TO-220AB(H) | Active |
Datasheet
|
