Power MOSFETS | Status :
Active
MCB160N04Y
- Package Type:D2-PAK
- Packing Info:Tape&Reel:800pcs/Reel;
- Category:Power MOSFETS
Product Detail
| Part Number | Number of Functions | Channel | Drain-Source Voltage VDS (V) |
Gate-Source Voltage VGS (V) |
Drain Current ID (A) |
Drain-Source On-Resistance RDS(ON) Max @VGS=10V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=4.5V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=2.5V (Ω) |
Gate Threshold Voltage VGS(th) Min (V) |
Gate Threshold Voltage VGS(th) Max (V) |
ESD Diodes |
Junction Temperature Tj [max] (°C) |
Single Pulsed Avalanche Energy EAS(mJ) |
Pulsed Drain Current IDM(A) |
Input Capacitance Ciss(pF) |
Output Capacitance Coss(pF) |
Power Rating PD(W) |
Total Gate Charge Qg(nC) |
Gate-Drain Charge Qgd(nC) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MCB160N04Y | Single | N | 40 | ±20 | 160 | 0.00185 | 0.0028 | 1 | 2.5 | No | 150 | 625 | 480 | 7040 | 1320 | 150 | 121 | 25 |
| Part Number MCB160N04Y | Number of Functions Single | Channel N |
Drain-Source Voltage VDS (V) 40 |
Gate-Source Voltage VGS (V) ±20 |
Drain Current ID (A) 160 |
Drain-Source On-Resistance RDS(ON) Max @VGS=10V (Ω) 0.00185 |
Drain-Source On-Resistance RDS(ON) Max @VGS=4.5V (Ω) 0.0028 |
Drain-Source On-Resistance RDS(ON) Max @VGS=2.5V (Ω) |
Gate Threshold Voltage VGS(th) Min (V) 1 |
Gate Threshold Voltage VGS(th) Max (V) 2.5 |
ESD Diodes No |
Junction Temperature Tj [max] (°C) 150 |
Single Pulsed Avalanche Energy EAS(mJ) 625 |
Pulsed Drain Current IDM(A) 480 |
Packing Information
Environmental Information 
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| MSL | Halogen Free |
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| 1 |
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