Power MOSFETS | Status :
Active
MCG50N03
- Package Type:DFN3333
- Packing Info:Tape&Reel:5Kpcs/Reel;
- Category:Power MOSFETS
Product Detail
Part Number | Number of Functions | Channel | Drain-Source Voltage VDS (V) |
Gate-Source Voltage VGS (V) |
Drain Current ID (A) |
Drain-Source On-Resistance RDS(ON) Max @VGS=10V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=4.5V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=2.5V (Ω) |
Gate Threshold Voltage VGS(th) Min (V) |
Gate Threshold Voltage VGS(th) Max (V) |
ESD Diodes |
Junction Temperature Tj [max] (°C) |
Single Pulsed Avalanche Energy EAS(mJ) |
Pulsed Drain Current IDM(A) |
Input Capacitance Ciss(pF) |
Output Capacitance Coss(pF) |
Power Rating PD(W) |
Total Gate Charge Qg(nC) |
Gate-Drain Charge Qgd(nC) |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
MCG50N03 | Single | N | 30 | ±20 | 50 | 0.006 | 0.008 | 1 | 2.5 | No | 175 | 112 | 200 | 2150 | 270 | 30 | 43 | 12 |
Part Number MCG50N03 | Number of Functions Single | Channel N |
Drain-Source Voltage VDS (V) 30 |
Gate-Source Voltage VGS (V) ±20 |
Drain Current ID (A) 50 |
Drain-Source On-Resistance RDS(ON) Max @VGS=10V (Ω) 0.006 |
Drain-Source On-Resistance RDS(ON) Max @VGS=4.5V (Ω) 0.008 |
Drain-Source On-Resistance RDS(ON) Max @VGS=2.5V (Ω) |
Gate Threshold Voltage VGS(th) Min (V) 1 |
Gate Threshold Voltage VGS(th) Max (V) 2.5 |
ESD Diodes No |
Junction Temperature Tj [max] (°C) 175 |
Single Pulsed Avalanche Energy EAS(mJ) 112 |
Pulsed Drain Current IDM(A) 200 |
Packing Information
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