Power MOSFETS | Status :
Active
MCT04N15
- Package Type:SOT-223
- Packing Info:Tape&Reel;
- Category:Power MOSFETS
Product Detail
Part Number | Number of Functions | Channel | Drain-Source Voltage VDS (V) |
Gate-Source Voltage VGS (V) |
Drain Current ID (A) |
Drain-Source On-Resistance RDS(ON) Max @VGS=10V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=4.5V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=2.5V (Ω) |
Gate Threshold Voltage VGS(th) Min (V) |
Gate Threshold Voltage VGS(th) Max (V) |
ESD Diodes |
Junction Temperature Tj [max] (°C) |
Single Pulsed Avalanche Energy EAS(mJ) |
Pulsed Drain Current IDM(A) |
Input Capacitance Ciss(pF) |
Output Capacitance Coss(pF) |
Power Rating PD(W) |
Total Gate Charge Qg(nC) |
Gate-Drain Charge Qgd(nC) |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
MCT04N15 | Single | N | 150 | ±20 | 4 | 0.16 | 1.5 | 2.5 | No | 150 | 1.6 | 16 | 1392 | 54 | 1.9 | 27 | 5.8 |
Part Number MCT04N15 | Number of Functions Single | Channel N |
Drain-Source Voltage VDS (V) 150 |
Gate-Source Voltage VGS (V) ±20 |
Drain Current ID (A) 4 |
Drain-Source On-Resistance RDS(ON) Max @VGS=10V (Ω) 0.16 |
Drain-Source On-Resistance RDS(ON) Max @VGS=4.5V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=2.5V (Ω) |
Gate Threshold Voltage VGS(th) Min (V) 1.5 |
Gate Threshold Voltage VGS(th) Max (V) 2.5 |
ESD Diodes No |
Junction Temperature Tj [max] (°C) 150 |
Single Pulsed Avalanche Energy EAS(mJ) 1.6 |
Pulsed Drain Current IDM(A) 16 |
Packing Information
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