Power MOSFETS | Status :
Active
MCT04P06
- Package Type:SOT-223
- Packing Info:Tape&Reel;
- Category:Power MOSFETS
Product Detail
| Part Number | Number of Functions | Channel | Drain-Source Voltage VDS (V) |
Gate-Source Voltage VGS (V) |
Drain Current ID (A) |
Drain-Source On-Resistance RDS(ON) Max @VGS=10V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=4.5V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=2.5V (Ω) |
Gate Threshold Voltage VGS(th) Min (V) |
Gate Threshold Voltage VGS(th) Max (V) |
ESD Diodes |
Junction Temperature Tj [max] (°C) |
Single Pulsed Avalanche Energy EAS(mJ) |
Pulsed Drain Current IDM(A) |
Input Capacitance Ciss(pF) |
Output Capacitance Coss(pF) |
Power Rating PD(W) |
Total Gate Charge Qg(nC) |
Gate-Drain Charge Qgd(nC) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MCT04P06 | Single | P | -60 | ±20 | -3.5 | 0.08 | 0.1 | -1 | -3 | No | 150 | 30 | -14 | 1495 | 84 | 2 | 27 | 6 |
| Part Number MCT04P06 | Number of Functions Single | Channel P |
Drain-Source Voltage VDS (V) -60 |
Gate-Source Voltage VGS (V) ±20 |
Drain Current ID (A) -3.5 |
Drain-Source On-Resistance RDS(ON) Max @VGS=10V (Ω) 0.08 |
Drain-Source On-Resistance RDS(ON) Max @VGS=4.5V (Ω) 0.1 |
Drain-Source On-Resistance RDS(ON) Max @VGS=2.5V (Ω) |
Gate Threshold Voltage VGS(th) Min (V) -1 |
Gate Threshold Voltage VGS(th) Max (V) -3 |
ESD Diodes No |
Junction Temperature Tj [max] (°C) 150 |
Single Pulsed Avalanche Energy EAS(mJ) 30 |
Pulsed Drain Current IDM(A) -14 |
Packing Information
Environmental Information 
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| Tin Whisker Test Report | Halogen Free |
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