Power MOSFETS | Status :
Active
Automotive
MCU2D8N04YHQ
- Package Type:DPAK
- Packing Info:Tape:2.5K/Reel,25K/Ctn;
- Category:Power MOSFETS
- MPN:MCU2D8N04YHQ-TP
Product Detail
| Part Number | Number of Functions | Channel | Drain-Source Voltage VDS (V) |
Gate-Source Voltage VGS (V) |
Drain Current ID (A) |
Drain-Source On-Resistance RDS(ON) Max @VGS=10V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=4.5V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=2.5V (Ω) |
Gate Threshold Voltage VGS(th) Min (V) |
Gate Threshold Voltage VGS(th) Max (V) |
ESD Diodes |
Junction Temperature Tj [max] (°C) |
Single Pulsed Avalanche Energy EAS(mJ) |
Pulsed Drain Current IDM(A) |
Input Capacitance Ciss(pF) |
Output Capacitance Coss(pF) |
Power Rating PD(W) |
Total Gate Charge Qg(nC) |
Gate-Drain Charge Qgd(nC) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MCU2D8N04YHQ | Single | N | 40 | ±20 | 160 | 0.0028 | 2 | 4 | No | 175 | 315 | 640 | 3344 | 977 | 125 | 42 | 9.4 |
| Part Number MCU2D8N04YHQ | Number of Functions Single | Channel N |
Drain-Source Voltage VDS (V) 40 |
Gate-Source Voltage VGS (V) ±20 |
Drain Current ID (A) 160 |
Drain-Source On-Resistance RDS(ON) Max @VGS=10V (Ω) 0.0028 |
Drain-Source On-Resistance RDS(ON) Max @VGS=4.5V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=2.5V (Ω) |
Gate Threshold Voltage VGS(th) Min (V) 2 |
Gate Threshold Voltage VGS(th) Max (V) 4 |
ESD Diodes No |
Junction Temperature Tj [max] (°C) 175 |
Single Pulsed Avalanche Energy EAS(mJ) 315 |
Pulsed Drain Current IDM(A) 640 |
Packing Information
| Part Number | Package Type | Packing Specification | Component Weight (g) | Marking Code | Packing Info |
|---|---|---|---|---|---|
| MCU2D8N04YHQ | DPAK | DPAK | 0.3252 | 2D8N04YHQ | Tape:2.5K/Reel,25K/Ctn; |
Environmental Information 
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