Power MOSFETS | Status :
Active
Automotive
MCU2D8N04YHQ
- Package Type:DPAK
- Packing Info:Tape:2.5K/Reel,25K/Ctn;
- Category:Power MOSFETS
Product Detail
Part Number | Number of Functions | Channel | Drain-Source Voltage VDS (V) |
Gate-Source Voltage VGS (V) |
Drain Current ID (A) |
Drain-Source On-Resistance RDS(ON) Max @VGS=10V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=4.5V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=2.5V (Ω) |
Gate Threshold Voltage VGS(th) Min (V) |
Gate Threshold Voltage VGS(th) Max (V) |
ESD Diodes |
Junction Temperature Tj [max] (°C) |
Single Pulsed Avalanche Energy EAS(mJ) |
Pulsed Drain Current IDM(A) |
Input Capacitance Ciss(pF) |
Output Capacitance Coss(pF) |
Power Rating PD(W) |
Total Gate Charge Qg(nC) |
Gate-Drain Charge Qgd(nC) |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
MCU2D8N04YHQ | Single | N | 40 | ±20 | 160 | 0.0028 | 2 | 4 | No | 175 | 3344 | 977 | 125 | 42 | 9.4 |
Part Number MCU2D8N04YHQ | Number of Functions Single | Channel N |
Drain-Source Voltage VDS (V) 40 |
Gate-Source Voltage VGS (V) ±20 |
Drain Current ID (A) 160 |
Drain-Source On-Resistance RDS(ON) Max @VGS=10V (Ω) 0.0028 |
Drain-Source On-Resistance RDS(ON) Max @VGS=4.5V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=2.5V (Ω) |
Gate Threshold Voltage VGS(th) Min (V) 2 |
Gate Threshold Voltage VGS(th) Max (V) 4 |
ESD Diodes No |
Junction Temperature Tj [max] (°C) 175 |
Single Pulsed Avalanche Energy EAS(mJ) |
Pulsed Drain Current IDM(A) |
Packing Information
Similar Recommendations
Part Number | Category | Package Type | Status | Datasheet |
---|---|---|---|---|
MCAC150N03A | Power MOSFETS | DFN5060 | Active | Datasheet |
MCAC50N03 | Power MOSFETS | DFN5060 | Active | Datasheet |
MCAC50N10Y | Power MOSFETS | DFN5060 | Active | Datasheet |
MCAC80N06Y | Power MOSFETS | DFN5060 | Active | Datasheet |