Power MOSFETS | Status :
Active
MCU45P04B
- Package Type:DPAK
- Packing Info:Tape:2.5K/Reel,25K/Ctn;
- Category:Power MOSFETS
Product Detail
| Part Number | Number of Functions | Channel | Drain-Source Voltage VDS (V) |
Gate-Source Voltage VGS (V) |
Drain Current ID (A) |
Drain-Source On-Resistance RDS(ON) Max @VGS=10V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=4.5V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=2.5V (Ω) |
Gate Threshold Voltage VGS(th) Min (V) |
Gate Threshold Voltage VGS(th) Max (V) |
ESD Diodes |
Junction Temperature Tj [max] (°C) |
Single Pulsed Avalanche Energy EAS(mJ) |
Pulsed Drain Current IDM(A) |
Input Capacitance Ciss(pF) |
Output Capacitance Coss(pF) |
Power Rating PD(W) |
Total Gate Charge Qg(nC) |
Gate-Drain Charge Qgd(nC) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MCU45P04B | Single | P | -40 | ±20 | -45 | 0.014 | 0.021 | -1 | -2.3 | No | 3433 | 227 | 56 | 58 | 7.8 |
| Part Number MCU45P04B | Number of Functions Single | Channel P |
Drain-Source Voltage VDS (V) -40 |
Gate-Source Voltage VGS (V) ±20 |
Drain Current ID (A) -45 |
Drain-Source On-Resistance RDS(ON) Max @VGS=10V (Ω) 0.014 |
Drain-Source On-Resistance RDS(ON) Max @VGS=4.5V (Ω) 0.021 |
Drain-Source On-Resistance RDS(ON) Max @VGS=2.5V (Ω) |
Gate Threshold Voltage VGS(th) Min (V) -1 |
Gate Threshold Voltage VGS(th) Max (V) -2.3 |
ESD Diodes No |
Junction Temperature Tj [max] (°C) |
Single Pulsed Avalanche Energy EAS(mJ) |
Pulsed Drain Current IDM(A) |
Packing Information
Environmental Information 
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