Power MOSFETS | Status :
Active
Automotive
MCU6D5N06YLQ
- Package Type:DPAK
- Packing Info:Tape&Reel:2.5Kpcs/Reel;
- Category:Power MOSFETS
Product Detail
| Part Number | Number of Functions | Channel | Drain-Source Voltage VDS (V) |
Gate-Source Voltage VGS (V) |
Drain Current ID (A) |
Drain-Source On-Resistance RDS(ON) Max @VGS=10V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=4.5V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=2.5V (Ω) |
Gate Threshold Voltage VGS(th) Min (V) |
Gate Threshold Voltage VGS(th) Max (V) |
ESD Diodes |
Junction Temperature Tj [max] (°C) |
Single Pulsed Avalanche Energy EAS(mJ) |
Pulsed Drain Current IDM(A) |
Input Capacitance Ciss(pF) |
Output Capacitance Coss(pF) |
Power Rating PD(W) |
Total Gate Charge Qg(nC) |
Gate-Drain Charge Qgd(nC) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MCU6D5N06YLQ | Single | N | 60 | ±20 | 80 | 0.0065 | 0.009 | 1.3 | 2.3 | No | 175 | 132 | 320 | 1746 | 320 | 88 | 27 | 3.9 |
| Part Number MCU6D5N06YLQ | Number of Functions Single | Channel N |
Drain-Source Voltage VDS (V) 60 |
Gate-Source Voltage VGS (V) ±20 |
Drain Current ID (A) 80 |
Drain-Source On-Resistance RDS(ON) Max @VGS=10V (Ω) 0.0065 |
Drain-Source On-Resistance RDS(ON) Max @VGS=4.5V (Ω) 0.009 |
Drain-Source On-Resistance RDS(ON) Max @VGS=2.5V (Ω) |
Gate Threshold Voltage VGS(th) Min (V) 1.3 |
Gate Threshold Voltage VGS(th) Max (V) 2.3 |
ESD Diodes No |
Junction Temperature Tj [max] (°C) 175 |
Single Pulsed Avalanche Energy EAS(mJ) 132 |
Pulsed Drain Current IDM(A) 320 |
Packing Information
Environmental Information 
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| MSL | Halogen Free |
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