Power MOSFETS | Status :
Active
MCU80P06Y
- Package Type:DPAK
- Packing Info:Tape:2.5K/Reel,25K/Ctn;
- Category:Power MOSFETS
Product Detail
| Part Number | Number of Functions | Channel | Drain-Source Voltage VDS (V) |
Gate-Source Voltage VGS (V) |
Drain Current ID (A) |
Drain-Source On-Resistance RDS(ON) Max @VGS=10V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=4.5V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=2.5V (Ω) |
Gate Threshold Voltage VGS(th) Min (V) |
Gate Threshold Voltage VGS(th) Max (V) |
ESD Diodes |
Junction Temperature Tj [max] (°C) |
Single Pulsed Avalanche Energy EAS(mJ) |
Pulsed Drain Current IDM(A) |
Input Capacitance Ciss(pF) |
Output Capacitance Coss(pF) |
Power Rating PD(W) |
Total Gate Charge Qg(nC) |
Gate-Drain Charge Qgd(nC) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MCU80P06Y | Single | P | -60 | ±20 | -80 | 0.0084 | -2 | -4 | No | 150 | 400 | -320 | 5332 | 996 | 125 | 82 | 17 |
| Part Number MCU80P06Y | Number of Functions Single | Channel P |
Drain-Source Voltage VDS (V) -60 |
Gate-Source Voltage VGS (V) ±20 |
Drain Current ID (A) -80 |
Drain-Source On-Resistance RDS(ON) Max @VGS=10V (Ω) 0.0084 |
Drain-Source On-Resistance RDS(ON) Max @VGS=4.5V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=2.5V (Ω) |
Gate Threshold Voltage VGS(th) Min (V) -2 |
Gate Threshold Voltage VGS(th) Max (V) -4 |
ESD Diodes No |
Junction Temperature Tj [max] (°C) 150 |
Single Pulsed Avalanche Energy EAS(mJ) 400 |
Pulsed Drain Current IDM(A) -320 |
Packing Information
Environmental Information 
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