Power MOSFETS | Status :
Active
MCW099N60SH
- Package Type:TO-247
- Packing Info:Bulk: 360pcs/Box;
- Category:Power MOSFETS
Product Detail
Part Number | Number of Functions | Channel | Drain-Source Voltage VDS (V) |
Gate-Source Voltage VGS (V) |
Drain Current ID (A) |
Drain-Source On-Resistance RDS(ON) Max @VGS=10V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=4.5V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=2.5V (Ω) |
Gate Threshold Voltage VGS(th) Min (V) |
Gate Threshold Voltage VGS(th) Max (V) |
ESD Diodes |
Junction Temperature Tj [max] (°C) |
Single Pulsed Avalanche Energy EAS(mJ) |
Pulsed Drain Current IDM(A) |
Input Capacitance Ciss(pF) |
Output Capacitance Coss(pF) |
Power Rating PD(W) |
Total Gate Charge Qg(nC) |
Gate-Drain Charge Qgd(nC) |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
MCW099N60SH | Single | N | 600 | ±30 | 30.5 | 0.099 | 2.5 | 4.5 | No | 150 | 16 | 122 | 2224 | 125 | 236 | 56.5 | 27 |
Part Number MCW099N60SH | Number of Functions Single | Channel N |
Drain-Source Voltage VDS (V) 600 |
Gate-Source Voltage VGS (V) ±30 |
Drain Current ID (A) 30.5 |
Drain-Source On-Resistance RDS(ON) Max @VGS=10V (Ω) 0.099 |
Drain-Source On-Resistance RDS(ON) Max @VGS=4.5V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=2.5V (Ω) |
Gate Threshold Voltage VGS(th) Min (V) 2.5 |
Gate Threshold Voltage VGS(th) Max (V) 4.5 |
ESD Diodes No |
Junction Temperature Tj [max] (°C) 150 |
Single Pulsed Avalanche Energy EAS(mJ) 16 |
Pulsed Drain Current IDM(A) 122 |
Packing Information
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