Power MOSFETS | Status : Active

MSJP11N65A

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Product Detail

Part Number Number of Functions Channel Drain-Source
Voltage
VDS (V)
Gate-Source
Voltage
VGS (V)
Drain
Current
ID (A)
Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=10V (Ω)
Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=4.5V (Ω)
Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=2.5V (Ω)
Gate
Threshold
Voltage
VGS(th)
Min
(V)
Gate
Threshold
Voltage
VGS(th) Max
(V)
ESD
Diodes
Junction
Temperature
Tj [max]
(°C)
Single Pulsed
Avalanche
Energy
EAS(mJ)
Pulsed Drain
Current
IDM(A)
Input
Capacitance
Ciss(pF)
Output
Capacitance
Coss(pF)
Power
Rating
PD(W)
Total Gate
Charge
Qg(nC)
Gate-Drain
Charge
Qgd(nC)
MSJP11N65A Single N 650 ±30 11 0.38 2 4 No 150 142 44 774 890 83 20 10
Part Number MSJP11N65A Number of Functions Single Channel N Drain-Source
Voltage
VDS (V)
 650
Gate-Source
Voltage
VGS (V)
 ±30
Drain
Current
ID (A)
 11
Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=10V (Ω)
 0.38
Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=4.5V (Ω)
 
Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=2.5V (Ω)
 
Gate
Threshold
Voltage
VGS(th)
Min
(V)
 2
Gate
Threshold
Voltage
VGS(th) Max
(V)
 4
ESD
Diodes
 No
Junction
Temperature
Tj [max]
(°C)
 150
Single Pulsed
Avalanche
Energy
EAS(mJ)
 142
Pulsed Drain
Current
IDM(A)
 44

Packing Information

Part Number Package Type Packing Specification Component Weight (g) Marking Code
MSJP11N65A TO-220 TO-220 2.2400 MSJP11N65A

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Reliability Report Material Composition Data Sheet Soldering Profile Environmental Compliance
Configuration image Download Configuration image Download Configuration image Download Environmental Compliance Download
Tin Whisker Test Report
Tin Whisker Test Report

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