Power MOSFETS | Status : Active

MSJPFFR20N60

  • Package Type:TO-220F
  • Packing Info:Bulk:50pcs/Tube,1Kpcs/Box,5Kpcs/Carton; Bulk:50pcs/Tube,1Kpcs/Box,5Kpcs/Carton;
  • Category:Power MOSFETS
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Product Detail

Part Number Number of Functions Channel Drain-Source
Voltage
VDS (V)
Gate-Source
Voltage
VGS (V)
Drain
Current
ID (A)
Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=10V (Ω)
Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=4.5V (Ω)
Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=2.5V (Ω)
Gate
Threshold
Voltage
VGS(th)
Min
(V)
Gate
Threshold
Voltage
VGS(th) Max
(V)
ESD
Diodes
Junction
Temperature
Tj [max]
(°C)
Single Pulsed
Avalanche
Energy
EAS(mJ)
Pulsed Drain
Current
IDM(A)
Input
Capacitance
Ciss(pF)
Output
Capacitance
Coss(pF)
Power
Rating
PD(W)
Total Gate
Charge
Qg(nC)
Gate-Drain
Charge
Qgd(nC)
MSJPFFR20N60 Single N 600 ±30 12.3 0.193 3 5 No 150 160 49 1240 60 62.5 30 15
Part Number MSJPFFR20N60 Number of Functions Single Channel N Drain-Source
Voltage
VDS (V)
 600
Gate-Source
Voltage
VGS (V)
 ±30
Drain
Current
ID (A)
 12.3
Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=10V (Ω)
 0.193
Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=4.5V (Ω)
 
Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=2.5V (Ω)
 
Gate
Threshold
Voltage
VGS(th)
Min
(V)
 3
Gate
Threshold
Voltage
VGS(th) Max
(V)
 5
ESD
Diodes
 No
Junction
Temperature
Tj [max]
(°C)
 150
Single Pulsed
Avalanche
Energy
EAS(mJ)
 160
Pulsed Drain
Current
IDM(A)
 49

Packing Information

Part Number Package Type Packing Specification Component Weight (g) Marking Code
MSJPFFR20N60 TO-220F TO-220F 1.5950 MSJPFFR20N60

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Reliability Report Soldering Profile Environmental Compliance
Configuration image Download Configuration image Download Environmental Compliance Download
Tin Whisker Test Report MSL
Tin Whisker Test Report N/A

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