Power MOSFETS | Status :
Active
MCTL2D0N10YHR
- Package Type:TOLL-8L
- Packing Info:Tape&Reel:2Kpcs/Reel;
- Category:Power MOSFETS
Product Detail
| Part Number | Number of Functions | Channel | Drain-Source Voltage VDS (V) |
Gate-Source Voltage VGS (V) |
Drain Current ID (A) |
Drain-Source On-Resistance RDS(ON) Max @VGS=10V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=4.5V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=2.5V (Ω) |
Gate Threshold Voltage VGS(th) Min (V) |
Gate Threshold Voltage VGS(th) Max (V) |
ESD Diodes |
Junction Temperature Tj [max] (°C) |
Single Pulsed Avalanche Energy EAS(mJ) |
Pulsed Drain Current IDM(A) |
Input Capacitance Ciss(pF) |
Output Capacitance Coss(pF) |
Power Rating PD(W) |
Total Gate Charge Qg(nC) |
Gate-Drain Charge Qgd(nC) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MCTL2D0N10YHR | Single | N | 100 | ±20 | 300 | 0.002 | 2.2 | 3.8 | No | 175 | 2025 | 1200 | 6775 | 2150 | 333 | 89 | 22 |
| Part Number MCTL2D0N10YHR | Number of Functions Single | Channel N |
Drain-Source Voltage VDS (V) 100 |
Gate-Source Voltage VGS (V) ±20 |
Drain Current ID (A) 300 |
Drain-Source On-Resistance RDS(ON) Max @VGS=10V (Ω) 0.002 |
Drain-Source On-Resistance RDS(ON) Max @VGS=4.5V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=2.5V (Ω) |
Gate Threshold Voltage VGS(th) Min (V) 2.2 |
Gate Threshold Voltage VGS(th) Max (V) 3.8 |
ESD Diodes No |
Junction Temperature Tj [max] (°C) 175 |
Single Pulsed Avalanche Energy EAS(mJ) 2025 |
Pulsed Drain Current IDM(A) 1200 |
Packing Information
Environmental Information 
Download
| Tin Whisker Test Report | MSL | Halogen Free |
|---|---|---|
|
1 |
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