Power MOSFETS | Status : Active

MCP2D6N10Y

  • Package Type:TO-220AB(H)
  • Packing Info:Bulk:50pcs/Tube,1Kpcs/Box,5Kpcs/Carton; Bulk:50pcs/Tube,1Kpcs/Box,5Kpcs/Carton;
  • Category:Power MOSFETS
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Datasheet ECAD Model

Product Detail

Part Number Number of Functions Channel Drain-Source
Voltage
VDS (V)		 Gate-Source
Voltage
VGS (V)		 Drain
Current
ID (A)		 Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=10V (Ω)		 Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=4.5V (Ω)		 Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=2.5V (Ω)		 Gate
Threshold
Voltage
VGS(th)
Min
(V)		 Gate
Threshold
Voltage
VGS(th) Max
(V)		 ESD
Diodes		 Junction
Temperature
Tj [max]
(°C)		 Single Pulsed
Avalanche
Energy
EAS(mJ)		 Pulsed Drain
Current
IDM(A)		 Input
Capacitance
Ciss(pF)		 Output
Capacitance
Coss(pF)		 Power
Rating
PD(W)		 Total Gate
Charge
Qg(nC)		 Gate-Drain
Charge
Qgd(nC)
MCP2D6N10Y Single N 100 ±20 240 0.0026 2 4 No 150 1625 960 13760 4700 208 257 88
Part Number MCP2D6N10Y Number of Functions Single Channel N Drain-Source
Voltage
VDS (V)  100 		Gate-Source
Voltage
VGS (V)  ±20 		Drain
Current
ID (A)  240 		Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=10V (Ω)  0.0026 		Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=4.5V (Ω)   		Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=2.5V (Ω)   		Gate
Threshold
Voltage
VGS(th)
Min
(V)  2 		Gate
Threshold
Voltage
VGS(th) Max
(V)  4 		ESD
Diodes  No 		Junction
Temperature
Tj [max]
(°C)  150 		Single Pulsed
Avalanche
Energy
EAS(mJ)  1625 		Pulsed Drain
Current
IDM(A)  960

Packing Information

Part Number Package Type Packing Specification Component Weight (g) Marking Code
MCP2D6N10Y TO-220AB(H) TO-220AB(H) 1.9469 MCP2D6N10Y

Environmental Information link icon

Reliability Report Material Composition Data Sheet Soldering Profile Environmental Compliance
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Tin Whisker Test Report MSL Halogen Free
Tin Whisker Test Report N/A Halogen Free

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