SIC MOSFETS | Status : Active

SICW021N120P

  • Package Type:TO-247AB
  • Packing Info:Tube:30pcs/Tube, 1.8K/Ctn;
  • Category:SIC MOSFETS
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Datasheet ECAD Model

Product Detail

Part Number Number of Functions Channel Drain-Source
Voltage
VDS (V)		 Gate-Source
Voltage
VGS (V)		 Drain
Current
ID (A)		 Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=18V (Ω)		 Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=15V (Ω)		 Gate
Threshold
Voltage
VGS(th) Min
(V)		 Gate
Threshold
Voltage
VGS(th) Max (V)		 ESD
Diodes		 Junction
Temperature
Tj [max]
(°C)		 Single
Pulsed
Avalanche
Energy
EAS(mJ)		 Pulsed Drain
Current
IDM(A)		 Input
Capacitance
Ciss(pF)		 Power
Rating
PD(W)		 Total Gate
Charge
Qg(nC)
SICW021N120P Single N 1200 -10/+22 100 0.0294 2 4.5 No 175 250 3741 469 200
Part Number SICW021N120P Number of Functions Single Channel N Drain-Source
Voltage
VDS (V)  1200 		Gate-Source
Voltage
VGS (V)  -10/+22 		Drain
Current
ID (A)  100 		Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=18V (Ω)  0.0294 		Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=15V (Ω)   		Gate
Threshold
Voltage
VGS(th) Min
(V)  2 		Gate
Threshold
Voltage
VGS(th) Max (V)  4.5 		ESD
Diodes  No 		Junction
Temperature
Tj [max]
(°C)  175 		Single
Pulsed
Avalanche
Energy
EAS(mJ)   		Pulsed Drain
Current
IDM(A)  250

Packing Information

Part Number Package Type Packing Specification Component Weight (g) Marking Code
SICW021N120P TO-247AB TO-247AB 5.6000 SICW021N120P

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Reliability Report Soldering Profile Environmental Compliance
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MSL
N/A

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