SIC MOSFETS | Status : Active

SICW120N120H4

  • Package Type:TO-247-4
  • Packing Info:Tube:30pcs/Tube, 1.8K/Ctn;
  • Category:SIC MOSFETS
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Datasheet ECAD Model

Product Detail

Part Number Number of Functions Channel Drain-Source
Voltage
VDS (V)		 Gate-Source
Voltage
VGS (V)		 Drain
Current
ID (A)		 Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=18V (Ω)		 Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=15V (Ω)		 Gate
Threshold
Voltage
VGS(th) Min
(V)		 Gate
Threshold
Voltage
VGS(th) Max (V)		 ESD
Diodes		 Junction
Temperature
Tj [max]
(°C)		 Single
Pulsed
Avalanche
Energy
EAS(mJ)		 Pulsed Drain
Current
IDM(A)		 Input
Capacitance
Ciss(pF)		 Power
Rating
PD(W)		 Total Gate
Charge
Qg(nC)
SICW120N120H4 Single N 1200 -10/+25 24 2 4.5 No 175 625 65 1083 166 67
Part Number SICW120N120H4 Number of Functions Single Channel N Drain-Source
Voltage
VDS (V)  1200 		Gate-Source
Voltage
VGS (V)  -10/+25 		Drain
Current
ID (A)  24 		Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=18V (Ω)   		Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=15V (Ω)   		Gate
Threshold
Voltage
VGS(th) Min
(V)  2 		Gate
Threshold
Voltage
VGS(th) Max (V)  4.5 		ESD
Diodes  No 		Junction
Temperature
Tj [max]
(°C)  175 		Single
Pulsed
Avalanche
Energy
EAS(mJ)  625 		Pulsed Drain
Current
IDM(A)  65

Packing Information

Part Number Package Type Packing Specification Component Weight (g) Marking Code
SICW120N120H4 Package Type Image TO-247-4 TO-247-4 6.1165 SICW120N120H4

Environmental Information link icon

Reliability Report Material Composition Data Sheet Soldering Profile Environmental Compliance
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MSL
N/A

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