Power MOSFETS | Status :
Active
Automotive
MCU3D8N04YHQ
- Package Type:DPAK
- Packing Info:Tape&Reel: 2.5Kpcs/Reel;
- Category:Power MOSFETS
Product Detail
| Part Number | Number of Functions | Channel | Drain-Source Voltage VDS (V) |
Gate-Source Voltage VGS (V) |
Drain Current ID (A) |
Drain-Source On-Resistance RDS(ON) Max @VGS=10V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=4.5V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=2.5V (Ω) |
Gate Threshold Voltage VGS(th) Min (V) |
Gate Threshold Voltage VGS(th) Max (V) |
ESD Diodes |
Junction Temperature Tj [max] (°C) |
Single Pulsed Avalanche Energy EAS(mJ) |
Pulsed Drain Current IDM(A) |
Input Capacitance Ciss(pF) |
Output Capacitance Coss(pF) |
Power Rating PD(W) |
Total Gate Charge Qg(nC) |
Gate-Drain Charge Qgd(nC) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MCU3D8N04YHQ | Single | N | 40 | ±20 | 100 | 0.0038 | 2.2 | 3.8 | No | 175 | 161 | 400 | 1745 | 580 | 83 | 23 | 3 |
| Part Number MCU3D8N04YHQ | Number of Functions Single | Channel N |
Drain-Source Voltage VDS (V) 40 |
Gate-Source Voltage VGS (V) ±20 |
Drain Current ID (A) 100 |
Drain-Source On-Resistance RDS(ON) Max @VGS=10V (Ω) 0.0038 |
Drain-Source On-Resistance RDS(ON) Max @VGS=4.5V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=2.5V (Ω) |
Gate Threshold Voltage VGS(th) Min (V) 2.2 |
Gate Threshold Voltage VGS(th) Max (V) 3.8 |
ESD Diodes No |
Junction Temperature Tj [max] (°C) 175 |
Single Pulsed Avalanche Energy EAS(mJ) 161 |
Pulsed Drain Current IDM(A) 400 |
Packing Information
Environmental Information 
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| MSL | Halogen Free |
|---|---|
| 1 |
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