Power MOSFETS | Status :
Active
Automotive
MCU62N10YHE3
- Package Type:DPAK
- Packing Info:Tape:2.5K/Reel,25K/Ctn;
- Category:Power MOSFETS
Product Detail
| Part Number | Number of Functions | Channel | Drain-Source Voltage VDS (V) |
Gate-Source Voltage VGS (V) |
Drain Current ID (A) |
Drain-Source On-Resistance RDS(ON) Max @VGS=10V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=4.5V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=2.5V (Ω) |
Gate Threshold Voltage VGS(th) Min (V) |
Gate Threshold Voltage VGS(th) Max (V) |
ESD Diodes |
Junction Temperature Tj [max] (°C) |
Single Pulsed Avalanche Energy EAS(mJ) |
Pulsed Drain Current IDM(A) |
Input Capacitance Ciss(pF) |
Output Capacitance Coss(pF) |
Power Rating PD(W) |
Total Gate Charge Qg(nC) |
Gate-Drain Charge Qgd(nC) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MCU62N10YHE3 | Single | N | 100 | ±20 | 62 | 0.011 | 0.016 | 1 | 2.5 | No | 175 | 1379 | 324 | 94 | 27.6 | 7.6 |
| Part Number MCU62N10YHE3 | Number of Functions Single | Channel N |
Drain-Source Voltage VDS (V) 100 |
Gate-Source Voltage VGS (V) ±20 |
Drain Current ID (A) 62 |
Drain-Source On-Resistance RDS(ON) Max @VGS=10V (Ω) 0.011 |
Drain-Source On-Resistance RDS(ON) Max @VGS=4.5V (Ω) 0.016 |
Drain-Source On-Resistance RDS(ON) Max @VGS=2.5V (Ω) |
Gate Threshold Voltage VGS(th) Min (V) 1 |
Gate Threshold Voltage VGS(th) Max (V) 2.5 |
ESD Diodes No |
Junction Temperature Tj [max] (°C) 175 |
Single Pulsed Avalanche Energy EAS(mJ) |
Pulsed Drain Current IDM(A) |
Packing Information
Environmental Information 
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