Power MOSFETS | Status :
Active
MSJB11N80A
- Package Type:D2-PAK
- Packing Info:Tape&Reel:800pcs/Reel;
- Category:Power MOSFETS
Product Detail
| Part Number | Number of Functions | Channel | Drain-Source Voltage VDS (V) |
Gate-Source Voltage VGS (V) |
Drain Current ID (A) |
Drain-Source On-Resistance RDS(ON) Max @VGS=10V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=4.5V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=2.5V (Ω) |
Gate Threshold Voltage VGS(th) Min (V) |
Gate Threshold Voltage VGS(th) Max (V) |
ESD Diodes |
Junction Temperature Tj [max] (°C) |
Single Pulsed Avalanche Energy EAS(mJ) |
Pulsed Drain Current IDM(A) |
Input Capacitance Ciss(pF) |
Output Capacitance Coss(pF) |
Power Rating PD(W) |
Total Gate Charge Qg(nC) |
Gate-Drain Charge Qgd(nC) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MSJB11N80A | Single | N | 800 | ±20 | 11 | 0.47 | 2.5 | 4.5 | Yes | 150 | 142 | 33 | 958 | 26 | 156 | 24 | 10 |
| Part Number MSJB11N80A | Number of Functions Single | Channel N |
Drain-Source Voltage VDS (V) 800 |
Gate-Source Voltage VGS (V) ±20 |
Drain Current ID (A) 11 |
Drain-Source On-Resistance RDS(ON) Max @VGS=10V (Ω) 0.47 |
Drain-Source On-Resistance RDS(ON) Max @VGS=4.5V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=2.5V (Ω) |
Gate Threshold Voltage VGS(th) Min (V) 2.5 |
Gate Threshold Voltage VGS(th) Max (V) 4.5 |
ESD Diodes Yes |
Junction Temperature Tj [max] (°C) 150 |
Single Pulsed Avalanche Energy EAS(mJ) 142 |
Pulsed Drain Current IDM(A) 33 |
Packing Information
Environmental Information 
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| MSL | Halogen Free |
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| 1 |
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