Power MOSFETS | Status : Obsoleted

MSJW20N65

Last Time Ship Date:05-15-2023 EOL Notice
  • Package Type:TO-247
  • Packing Info:Bulk: 360pcs/Box;
  • Category:Power MOSFETS
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Datasheet ECAD Model

Product Detail

Part Number Number of Functions Channel Drain-Source
Voltage
VDS (V)		 Gate-Source
Voltage
VGS (V)		 Drain
Current
ID (A)		 Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=10V (Ω)		 Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=4.5V (Ω)		 Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=2.5V (Ω)		 Gate
Threshold
Voltage
VGS(th)
Min
(V)		 Gate
Threshold
Voltage
VGS(th) Max
(V)		 ESD
Diodes		 Junction
Temperature
Tj [max]
(°C)		 Single Pulsed
Avalanche
Energy
EAS(mJ)		 Pulsed Drain
Current
IDM(A)		 Input
Capacitance
Ciss(pF)		 Output
Capacitance
Coss(pF)		 Power
Rating
PD(W)		 Total Gate
Charge
Qg(nC)		 Gate-Drain
Charge
Qgd(nC)
MSJW20N65 Single N 650 ±30 20 0.17 2.5 4.5 No 150 484 60 1724 61 39 15
Part Number MSJW20N65 Number of Functions Single Channel N Drain-Source
Voltage
VDS (V)  650 		Gate-Source
Voltage
VGS (V)  ±30 		Drain
Current
ID (A)  20 		Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=10V (Ω)  0.17 		Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=4.5V (Ω)   		Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=2.5V (Ω)   		Gate
Threshold
Voltage
VGS(th)
Min
(V)  2.5 		Gate
Threshold
Voltage
VGS(th) Max
(V)  4.5 		ESD
Diodes  No 		Junction
Temperature
Tj [max]
(°C)  150 		Single Pulsed
Avalanche
Energy
EAS(mJ)  484 		Pulsed Drain
Current
IDM(A)  60

Packing Information

Part Number Package Type Packing Specification Component Weight (g) Marking Code
MSJW20N65 TO-247 TO-247 5.6000 MSJW20N65

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Tin Whisker Test Report
Tin Whisker Test Report