Power MOSFETS | Status : Active

MCP2D6N10Y

Package Type:TO-220AB(H)
Packing Info:Bulk:50pcs/Tube,1Kpcs/Box,5Kpcs/Carton; Bulk:50pcs/Tube,1Kpcs/Box,5Kpcs/Carton;
Category:Power MOSFETS

Part Number	Number of Functions	Channel	Drain-Source Voltage V_DS (V)	Gate-Source Voltage V_GS (V)	Drain Current I_D (A)	Drain-Source On-Resistance RDS(ON) Max @VGS=10V (Ω)	Drain-Source On-Resistance RDS(ON) Max @VGS=4.5V (Ω)	Drain-Source On-Resistance RDS(ON) Max @VGS=2.5V (Ω)	Gate Threshold Voltage VGS(th) Min (V)	Gate Threshold Voltage VGS(th) Max (V)	ESD Diodes	Junction Temperature Tj [max] (°C)	Single Pulsed Avalanche Energy E_AS(mJ)	Pulsed Drain Current I_DM(A)	Input Capacitance Ciss(pF)	Output Capacitance Coss(pF)	Power Rating P_D(W)	Total Gate Charge Qg(nC)	Gate-Drain Charge Qgd(nC)
MCP2D6N10Y	Single	N	100	±20	240	0.0026			2	4	No	150	1625	960	13760	4700	208	257	88

Part Number MCP2D6N10Y

Number of Functions Single

Channel N

Drain-Source
Voltage
V_DS (V) 100

Gate-Source
Voltage
V_GS (V) ±20

Drain
Current
I_D (A) 240

Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=10V (Ω) 0.0026

Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=4.5V (Ω)

Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=2.5V (Ω)

Gate
Threshold
Voltage
VGS(th)
Min
(V) 2

Gate
Threshold
Voltage
VGS(th) Max
(V) 4

ESD
Diodes No

Junction
Temperature
Tj [max]
(°C) 150

Single Pulsed
Avalanche
Energy
E_AS(mJ) 1625

Pulsed Drain
Current
I_DM(A) 960

Part Number	Package Type	Packing Specification	Component Weight (g)	Marking Code
MCP2D6N10Y	TO-220AB(H)	TO-220AB(H)	1.9469	MCP2D6N10Y

Reliability Report	Material Composition Data Sheet	Soldering Profile	Environmental Compliance
Download	Download	Download	Download

Tin Whisker Test Report	MSL	Halogen Free
	N/A

Part Number	Category	Package Type	Status	Datasheet
MCAC150N03A	Power MOSFETS	DFN5060	Active	Datasheet
MCAC50N03	Power MOSFETS	DFN5060	Active	Datasheet
MCAC50N10Y	Power MOSFETS	DFN5060	Active	Datasheet
MCAC80N06Y	Power MOSFETS	DFN5060	Active	Datasheet

Products