![](../../../images/product/SICW040N120H4_TO_247_4_SIC_MOSFETS_Silicon_Carbide_(SIC)_MCC.png)
SIC MOSFETS | Status :
Active
SICW040N120H4
- Package Type:TO-247-4
- Packing Info:Tube:30pcs/Tube, 1.8K/Ctn;
- Category:SIC MOSFETS
Product Detail
Part Number | Number of Functions | Channel | Drain-Source Voltage VDS (V) |
Gate-Source Voltage VGS (V) |
Drain Current ID (A) |
Drain-Source On-Resistance RDS(ON) Max @VGS=18V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=15V (Ω) |
Gate Threshold Voltage VGS(th) Min (V) |
Gate Threshold Voltage VGS(th) Max (V) |
ESD Diodes |
Junction Temperature Tj [max] (°C) |
Single Pulsed Avalanche Energy EAS(mJ) |
Pulsed Drain Current IDM(A) |
Input Capacitance Ciss(pF) |
Power Rating PD(W) |
Total Gate Charge Qg(nC) |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
SICW040N120H4 | Single | N | 1200 | -10/+25 | 62 | 2 | 4.5 | No | 175 | 1875 | 223 | 3619 | 326 | 229 |
Part Number SICW040N120H4 | Number of Functions Single | Channel N |
Drain-Source Voltage VDS (V) 1200 |
Gate-Source Voltage VGS (V) -10/+25 |
Drain Current ID (A) 62 |
Drain-Source On-Resistance RDS(ON) Max @VGS=18V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=15V (Ω) |
Gate Threshold Voltage VGS(th) Min (V) 2 |
Gate Threshold Voltage VGS(th) Max (V) 4.5 |
ESD Diodes No |
Junction Temperature Tj [max] (°C) 175 |
Single Pulsed Avalanche Energy EAS(mJ) 1875 |
Pulsed Drain Current IDM(A) 223 |
Packing Information
Part Number | Package Type | Packing Specification | Component Weight (g) | Marking Code |
---|---|---|---|---|
SICW040N120H4 |
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TO-247-4 | 6.1165 | SICW040N120H4 |
MSL |
---|
N/A |
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