Power MOSFETS | Status :
Active
Automotive
MCACD55N04YHE3
- Package Type:PDFN5060-8D
- Packing Info:Tape&Reel:5Kpcs/Reel;
- Category:Power MOSFETS
Product Detail
Part Number | Number of Functions | Channel | Drain-Source Voltage VDS (V) |
Gate-Source Voltage VGS (V) |
Drain Current ID (A) |
Drain-Source On-Resistance RDS(ON) Max @VGS=10V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=4.5V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=2.5V (Ω) |
Gate Threshold Voltage VGS(th) Min (V) |
Gate Threshold Voltage VGS(th) Max (V) |
ESD Diodes |
Junction Temperature Tj [max] (°C) |
Single Pulsed Avalanche Energy EAS(mJ) |
Pulsed Drain Current IDM(A) |
Input Capacitance Ciss(pF) |
Output Capacitance Coss(pF) |
Power Rating PD(W) |
Total Gate Charge Qg(nC) |
Gate-Drain Charge Qgd(nC) |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
MCACD55N04YHE3 | Dual | N+N | 40 | ±20 | 55 | 0.0085 | 2 | 4 | No | 175 | 72 | 220 | 935 | 283 | 60 | 13 | 2.9 |
Part Number MCACD55N04YHE3 | Number of Functions Dual | Channel N+N |
Drain-Source Voltage VDS (V) 40 |
Gate-Source Voltage VGS (V) ±20 |
Drain Current ID (A) 55 |
Drain-Source On-Resistance RDS(ON) Max @VGS=10V (Ω) 0.0085 |
Drain-Source On-Resistance RDS(ON) Max @VGS=4.5V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=2.5V (Ω) |
Gate Threshold Voltage VGS(th) Min (V) 2 |
Gate Threshold Voltage VGS(th) Max (V) 4 |
ESD Diodes No |
Junction Temperature Tj [max] (°C) 175 |
Single Pulsed Avalanche Energy EAS(mJ) 72 |
Pulsed Drain Current IDM(A) 220 |
Packing Information
Part Number | Package Type | Packing Specification | Component Weight (g) | Marking Code | Packing Info |
---|---|---|---|---|---|
MCACD55N04YHE3 | PDFN5060-8D | PDFN5060-8D | 0.1027 | MCACD55N04Y | Tape&Reel:5Kpcs/Reel; |
MSL |
---|
1 |
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