MCU62N10YHE3

Part Number	Number of Functions	Channel	Drain-Source Voltage V_DS (V)	Gate-Source Voltage V_GS (V)	Drain Current I_D (A)	Drain-Source On-Resistance RDS(ON) Max @VGS=10V (Ω)	Drain-Source On-Resistance RDS(ON) Max @VGS=4.5V (Ω)	Drain-Source On-Resistance RDS(ON) Max @VGS=2.5V (Ω)	Gate Threshold Voltage VGS(th) Min (V)	Gate Threshold Voltage VGS(th) Max (V)	ESD Diodes	Junction Temperature Tj [max] (°C)	Single Pulsed Avalanche Energy E_AS(mJ)	Pulsed Drain Current I_DM(A)	Input Capacitance Ciss(pF)	Output Capacitance Coss(pF)	Power Rating P_D(W)	Total Gate Charge Qg(nC)	Gate-Drain Charge Qgd(nC)
MCU62N10YHE3	Single	N	100	±20	62	0.011	0.016		1	2.5	No	175			1379	324	94	27.6	7.6

Part Number MCU62N10YHE3

Number of Functions Single

Channel N

Drain-Source
Voltage
V_DS (V) 100

Gate-Source
Voltage
V_GS (V) ±20

Drain
Current
I_D (A) 62

Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=10V (Ω) 0.011

Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=4.5V (Ω) 0.016

Drain-Source
On-Resistance
RDS(ON)
Max
@VGS=2.5V (Ω)

Gate
Threshold
Voltage
VGS(th)
Min
(V) 1

Gate
Threshold
Voltage
VGS(th) Max
(V) 2.5

ESD
Diodes No

Junction
Temperature
Tj [max]
(°C) 175

Single Pulsed
Avalanche
Energy
E_AS(mJ)

Pulsed Drain
Current
I_DM(A)

Part Number	Package Type	Packing Specification	Component Weight (g)	Marking Code	Packing Info
MCU62N10YHE3	DPAK	DPAK	0.3252	MCU62N10Y	Tape:2.5K/Reel,25K/Ctn;

Reliability Report	Material Composition Data Sheet	Soldering Profile	Environmental Compliance
Download	Download	Download	Download

Halogen Free

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