Power MOSFETS | Status :
Active
MSJWFR60N60
- Package Type:TO-247AB(E)
- Packing Info:Tube:30pcs/Tube, 1.8K/Ctn;
- Category:Power MOSFETS
Product Detail
Part Number | Number of Functions | Channel | Drain-Source Voltage VDS (V) |
Gate-Source Voltage VGS (V) |
Drain Current ID (A) |
Drain-Source On-Resistance RDS(ON) Max @VGS=10V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=4.5V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=2.5V (Ω) |
Gate Threshold Voltage VGS(th) Min (V) |
Gate Threshold Voltage VGS(th) Max (V) |
ESD Diodes |
Junction Temperature Tj [max] (°C) |
Single Pulsed Avalanche Energy EAS(mJ) |
Pulsed Drain Current IDM(A) |
Input Capacitance Ciss(pF) |
Output Capacitance Coss(pF) |
Power Rating PD(W) |
Total Gate Charge Qg(nC) |
Gate-Drain Charge Qgd(nC) |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
MSJWFR60N60 | Single | N | 600 | ±30 | 58 | 0.03 | 3 | 5 | No | 150 | 2371 | 232 | 8078 | 300 | 223 | 197 | 95 |
Part Number MSJWFR60N60 | Number of Functions Single | Channel N |
Drain-Source Voltage VDS (V) 600 |
Gate-Source Voltage VGS (V) ±30 |
Drain Current ID (A) 58 |
Drain-Source On-Resistance RDS(ON) Max @VGS=10V (Ω) 0.03 |
Drain-Source On-Resistance RDS(ON) Max @VGS=4.5V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=2.5V (Ω) |
Gate Threshold Voltage VGS(th) Min (V) 3 |
Gate Threshold Voltage VGS(th) Max (V) 5 |
ESD Diodes No |
Junction Temperature Tj [max] (°C) 150 |
Single Pulsed Avalanche Energy EAS(mJ) 2371 |
Pulsed Drain Current IDM(A) 232 |
Packing Information
Part Number | Package Type | Packing Specification | Component Weight (g) | Marking Code |
---|---|---|---|---|
MSJWFR60N60 | TO-247AB(E) | TO-247AB(E) | 0.0000 | MSJWFR60N60 |
MSL |
---|
N/A |
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