![](../../../images/product/MSJPFR20N60_TO_220AB(H)_Power_MOSFETS_MOSFETs_MCC.png)
Power MOSFETS | Status :
Active
MSJPFR20N60
- Package Type:TO-220AB(H)
- Packing Info:Bulk:50pcs/Tube,1Kpcs/Box,5Kpcs/Carton; Bulk:50pcs/Tube,1Kpcs/Box,5Kpcs/Carton;
- Category:Power MOSFETS
Product Detail
Part Number | Number of Functions | Channel | Drain-Source Voltage VDS (V) |
Gate-Source Voltage VGS (V) |
Drain Current ID (A) |
Drain-Source On-Resistance RDS(ON) Max @VGS=10V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=4.5V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=2.5V (Ω) |
Gate Threshold Voltage VGS(th) Min (V) |
Gate Threshold Voltage VGS(th) Max (V) |
ESD Diodes |
Junction Temperature Tj [max] (°C) |
Single Pulsed Avalanche Energy EAS(mJ) |
Pulsed Drain Current IDM(A) |
Input Capacitance Ciss(pF) |
Output Capacitance Coss(pF) |
Power Rating PD(W) |
Total Gate Charge Qg(nC) |
Gate-Drain Charge Qgd(nC) |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
MSJPFR20N60 | Single | N | 600 | ±30 | 17.9 | 0.193 | 3 | 5 | No | 150 | 160 | 71.6 | 1240 | 60 | 138 | 30 | 15 |
Part Number MSJPFR20N60 | Number of Functions Single | Channel N |
Drain-Source Voltage VDS (V) 600 |
Gate-Source Voltage VGS (V) ±30 |
Drain Current ID (A) 17.9 |
Drain-Source On-Resistance RDS(ON) Max @VGS=10V (Ω) 0.193 |
Drain-Source On-Resistance RDS(ON) Max @VGS=4.5V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=2.5V (Ω) |
Gate Threshold Voltage VGS(th) Min (V) 3 |
Gate Threshold Voltage VGS(th) Max (V) 5 |
ESD Diodes No |
Junction Temperature Tj [max] (°C) 150 |
Single Pulsed Avalanche Energy EAS(mJ) 160 |
Pulsed Drain Current IDM(A) 71.6 |
Packing Information
Part Number | Package Type | Packing Specification | Component Weight (g) | Marking Code |
---|---|---|---|---|
MSJPFR20N60 | TO-220AB(H) | TO-220AB(H) | 1.9469 | MSJPFR20N60 |
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