Power MOSFETS | Status :
Active
Automotive
MCAC80P06YHE3
- Package Type:DFN5060
- Packing Info:Tape&Reel:5Kpcs/Reel;
- Category:Power MOSFETS
Product Detail
| Part Number | Number of Functions | Channel | Drain-Source Voltage VDS (V) |
Gate-Source Voltage VGS (V) |
Drain Current ID (A) |
Drain-Source On-Resistance RDS(ON) Max @VGS=10V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=4.5V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=2.5V (Ω) |
Gate Threshold Voltage VGS(th) Min (V) |
Gate Threshold Voltage VGS(th) Max (V) |
ESD Diodes |
Junction Temperature Tj [max] (°C) |
Single Pulsed Avalanche Energy EAS(mJ) |
Pulsed Drain Current IDM(A) |
Input Capacitance Ciss(pF) |
Output Capacitance Coss(pF) |
Power Rating PD(W) |
Total Gate Charge Qg(nC) |
Gate-Drain Charge Qgd(nC) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MCAC80P06YHE3 | Single | P | -60 | ±18 | -80 | 0.008 | -2 | -4 | No | 150 | 400 | -320 | 5300 | 960 | 120 | 81 | 18 |
| Part Number MCAC80P06YHE3 | Number of Functions Single | Channel P |
Drain-Source Voltage VDS (V) -60 |
Gate-Source Voltage VGS (V) ±18 |
Drain Current ID (A) -80 |
Drain-Source On-Resistance RDS(ON) Max @VGS=10V (Ω) 0.008 |
Drain-Source On-Resistance RDS(ON) Max @VGS=4.5V (Ω) |
Drain-Source On-Resistance RDS(ON) Max @VGS=2.5V (Ω) |
Gate Threshold Voltage VGS(th) Min (V) -2 |
Gate Threshold Voltage VGS(th) Max (V) -4 |
ESD Diodes No |
Junction Temperature Tj [max] (°C) 150 |
Single Pulsed Avalanche Energy EAS(mJ) 400 |
Pulsed Drain Current IDM(A) -320 |
Packing Information
Environmental Information 
Download
| Tin Whisker Test Report | MSL | Halogen Free |
|---|---|---|
|
1 |
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